Tailoring of structure formation and phase composition in reactively sputtered zirconium oxide films using nitrogen as an additional reactive gas
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Raman Spectra and Structural Analysis in ZrOxNy Thin Films
Raman spectroscopy has been used as a local probe to characterize the structural evolution of magnetron-sputtered decorative zirconium oxynitride ZrOxNy films which result from an increase of reactive gas flow in the deposition The lines shapes, the frequency position and widths of the Raman bands show a systematic change as a function of the reactive gas flow (a mixture of both oxygen and nitr...
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This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...
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In two previous publications (1, 2) it has been shown that thermal oxidation of liquid indium metal droplets gives rise to hollow, hemispherical In203 structures which exhibit maximum quantum efficiencies of 290% at 310 nm. Oxide films of the same mean thickness, grown in essentially the same way except that they were exposed to the oxygen plasma during oxidation gave maximum quantum efficienci...
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Single-layered zirconium oxynitride (ZrNxOy) thin films have been deposited on steel substrates, at a constant temperature of 300 8C, by radiofrequency (rf) reactive magnetron sputtering of a pure Zr target in an argon–oxygen–nitrogen atmosphere. The variation of the flow rate of the reactive gases enabled changes in the composition and structure of the films. X-ray diffraction (XRD) and glanci...
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For the first time, Zr–Ge–N films were deposited on silicon and steel substrates by sputtering a Zr–Ge composite target in reactive Ar– N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films’ structure, internal stress, hardness and ...
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